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STMicroelectronics extends the MasterGaN® family with introduction of high power density 600V half bridge driver with two enhancement mode GaN devices optimized for asymmetrical topologies, evaluation board and samples available from Anglia

STMicroelectronics BlueNRG-2


The latest MasterGaN2 device from STMicroelectronics is an advanced power system-in-package that integrates a gate driver and two enhancement mode GaN transistors in asymmetrical half bridge configuration. By combining advanced integration with GaN’s inherent performance advantages, MasterGaN2 further extends the efficiency gains, size reduction, and weight savings of topologies such as active clamp flyback. MasterGaN2 is perfect for active clamp flyback circuits up to 65W.

The MasterGaN2 integrated power GaNs have 650 V drain source breakdown voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. Designers can easily connect external devices including Hall sensors and a controller such as a DSP, FPGA, or microcontroller directly to the MasterGaN device. The inputs are compatible with logic signals from 3.3V to 15V, which helps simplify the circuit design and bill of materials, permits a smaller footprint, and streamlines assembly. This integration helps increase the power density of adapters and fast chargers, in some cases they can be up to 80% smaller and 70% lighter while charging three times faster compared to ordinary silicon-based solutions.

By integrating GaN devices and gate drivers together into the same device package STMicroelectronics MasterGaN family offers a wide range of benefits when compared with traditional silicon-based solutions including:

Higher power density – Higher switching speeds also enable reduced system size and cost.

Higher efficiency – Reduced power losses, reduced power consumption, which exceed the most stringent energy requirements.

Faster go-to-market – Packaged integrated solution simplifies the design and at the same time gives a higher level of performance.

The MasterGaN2 device features built-in protection comprising of low-side and high-side under-voltage lockout (UVLO) preventing the power switches from operating in low efficiency or dangerous conditions, gate-driver interlocks which avoids cross-conduction conditions, a dedicated shutdown pin, and over-temperature protection.


Free Development Kit   
Key Features

  • 600 V SIP integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration
  • RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS)
  • IDS(MAX) = 10 A (LS) + 6.5 A (HS)
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Overtemperature protection
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • Very compact and simplified layout
  • QFN 9 x 9 x 1 mm package
  • Bill of material reduction
  • Flexible, easy and fast design

Click below for an overview of the MasterGaN platform from STMicroelectronics

The MasterGaN2 device is available in a compact 9x9 mm QFN package which is optimized for high-voltage applications, having over 2mm creepage distance between high-voltage and low-voltage pads and operates over the industrial temperature range of -40°C to +125°C.

Evaluation Board

STMicroelectronics Board

MasterGaN2 is supported by the EVALMASTERGAN2 evaluation board which is an easy to use and quick to adapt tool allowing designers to evaluate the characteristics of MasterGaN2 and to quickly create new topologies without the need for a complete PCB design. The EVALMASTERGAN2 provides an on-board programmable inputs deadtime generator with a single VCC supply (typ. 6 V). An embedded Linear voltage regulator offers 3.3 V rail to supply low voltage logic circuit like microcontrollers or FPGA.

The evaluation board also includes spare footprints allowing designers to customize the board to operate with the final application. These customizations include: use of separate input signal or single PWM signal, use of external bootstrap diode, separate supply for VCC, PVCC or Vbo and also the use of low-side shunt resistor for peak current mode topologies. The board gives access to all pins of the MasterGaN2 device. The evaluation board measures just 56 x 70 mm wide and is constructed from FR-4 material giving an impressive Rth(J-A) of 35°C/W, without forced airflow.

Anglia are offering customers a FREE Evaluation board and samples of the MasterGaN2 high power integrated GaN device from STMicroelectronics, please fill in the form below to register your interest now.

To register for a FREE Evaluation board and samples of the MasterGaN2 high power integrated GaN device from STMicroelectronics, please fill in the form below

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FREE samples for UK and Ireland customers only, subject to availability.

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