The latest MasterGaN2 device from STMicroelectronics is an advanced power system-in-package that integrates a gate driver and two enhancement mode GaN transistors in asymmetrical half bridge configuration. By combining advanced integration with GaN’s inherent performance advantages, MasterGaN2 further extends the efficiency gains, size reduction, and weight savings of topologies such as active clamp flyback. MasterGaN2 is perfect for active clamp flyback circuits up to 65W.
The MasterGaN2 integrated power GaNs have 650 V drain source breakdown voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. Designers can easily connect external devices including Hall sensors and a controller such as a DSP, FPGA, or microcontroller directly to the MasterGaN device. The inputs are compatible with logic signals from 3.3V to 15V, which helps simplify the circuit design and bill of materials, permits a smaller footprint, and streamlines assembly. This integration helps increase the power density of adapters and fast chargers, in some cases they can be up to 80% smaller and 70% lighter while charging three times faster compared to ordinary silicon-based solutions.
By integrating GaN devices and gate drivers together into the same device package STMicroelectronics MasterGaN family offers a wide range of benefits when compared with traditional silicon-based solutions including:
Higher power density – Higher switching speeds also enable reduced system size and cost.
Higher efficiency – Reduced power losses, reduced power consumption, which exceed the most stringent energy requirements.
Faster go-to-market – Packaged integrated solution simplifies the design and at the same time gives a higher level of performance.
The MasterGaN2 device features built-in protection comprising of low-side and high-side under-voltage lockout (UVLO) preventing the power switches from operating in low efficiency or dangerous conditions, gate-driver interlocks which avoids cross-conduction conditions, a dedicated shutdown pin, and over-temperature protection.
Click below for an overview of the MasterGaN platform from STMicroelectronics
The MasterGaN2 device is available in a compact 9x9 mm QFN package which is optimized for high-voltage applications, having over 2mm creepage distance between high-voltage and low-voltage pads and operates over the industrial temperature range of -40°C to +125°C.
MasterGaN2 is supported by the EVALMASTERGAN2 evaluation board which is an easy to use and quick to adapt tool allowing designers to evaluate the characteristics of MasterGaN2 and to quickly create new topologies without the need for a complete PCB design. The EVALMASTERGAN2 provides an on-board programmable inputs deadtime generator with a single VCC supply (typ. 6 V). An embedded Linear voltage regulator offers 3.3 V rail to supply low voltage logic circuit like microcontrollers or FPGA.
The evaluation board also includes spare footprints allowing designers to customize the board to operate with the final application. These customizations include: use of separate input signal or single PWM signal, use of external bootstrap diode, separate supply for VCC, PVCC or Vbo and also the use of low-side shunt resistor for peak current mode topologies. The board gives access to all pins of the MasterGaN2 device. The evaluation board measures just 56 x 70 mm wide and is constructed from FR-4 material giving an impressive Rth(J-A) of 35°C/W, without forced airflow.
Anglia are offering customers a FREE Evaluation board and samples of the MasterGaN2 high power integrated GaN device from STMicroelectronics, please fill in the form below to register your interest now.
FREE samples for UK and Ireland customers only, subject to availability.
STMicroelectronics are powering the next generation of Industry 4.0 applications with a new vibration-sensing solution optimized to enable smart maintenance of factory equipment. The IIS3DWB is a system-in-package MEMS sensor featuring a 3-axis digital vibration sensor with low noise over an ultra-wide and flat frequency range. The wide bandwidth, low noise, very stable and repeatable sensitivity, together with the capability of operating over an extended temperature range (up to +105 °C), make the device particularly suitable for vibration monitoring in industrial applications.
Power management company Eaton has introduced the C308F Bussmann Series of
fast-acting, ceramic tube fuses for intrinsic safety requirements used in
hazardous environments such as network barriers and other equipment used in mines,
oil drilling structures, gas stations, gas meters, chemical refineries and hazardous
Gemalto’s suite of Cinterion® EHS6T 3G Smart Terminals takes M2M
simplicity to a whole new level, leveraging Gemalto’s next-generation
Java® embedded technology...
Open standards and a huge ecosystem of freely available tools and code were a key
ingredient in the growth and success of Java and the wildly creative Java developer
community. Gemalto is moving this concept forward for the embedded space with the
Cinterion Concept Board...
Gemalto’s Cinterion® EHS6T 3G Smart LAN Terminal takes M2M simplicity to a whole
new level, leveraging Gemalto’s next-generation Java® embedded technology,
plug-and-play solutions are powered by a five-band HSPA+ baseband engine enabling
high-speed, secure wireless TCP/IP connectivity for a variety of industrial
The Cinterion® Connect Shield is an easy-to-use maker board, based on the ELS61-E
LTE Cat.1 cellular module, that combines the flexible and widely used Arduino open source
platform with Gemalto’s reliable and highly efficient cellular connectivity...
Gemalto, the world leader in digital security, is expanding Industrial IoT connectivity with a
significant breakthrough in wireless engineering – the industry's first IoT module to provide global connectivity on 12 LTE bands plus, global 3G and global 2G cellular coverage all from a