ROHM has announced the development of the smallest* transistor package on the market optimised for thin, compact portable devices. The VML0806 measures just 0.8mm x 0.6mm, with a height of only 0.36mm.
As portable devices get smaller and more sophisticated, thinner, more compact components are required. However, until now, problems related to internal element miniaturisation, bonding stability, package process accuracy, and surface mount technology limit the smallest conventional transistors to the 1006 metric size (1.0mm x 0.6mm, t=0.37mm).
ROHM was able to overcome these challenges by utilising a smaller element and high-precision package process technology, resulting in an unprecedentedly compact form factor. In addition, optimsed external and terminal dimensions improve mountability while facilitating mass production.
ROHM will initially offer this new package for small-signal MOSFETs, reducing mounting area and thickness by 67% and 28%, respectively, compared with conventional 1212 metric-sized (1.2mm x 1.2mm, t=0.5mm) products while still maintaining characteristics and performance. Future implementations will include bipolar and digital transistors, which are expected to contribute to end-product miniaturisation and higher density designs for circuit applications of all types.
Key Features
* Industry-small size minimises mounting area Compared to the smallest conventional small-signal transistor available (1212 metric size: 1.2mm x 1.2mm, t=0.5mm), mounting area is reduced 67% and thickness 28%.
* Bottom-terminal design supports high-density mounting
* Reduced MOSFET ON resistance Low ON resistance (2.6 ohm) is enabled in an ultra-compact form factor.
*ROHM September 6, 2012 survey
As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications.
As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications
In recent years Silicon Carbide (SiC) has emerged as one of the most viable candidates in the search for a next-generation, low-loss power semiconductor element due to its low ON resistance and superior high temperature, high frequency.
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