As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications such as Electric Vehicle Charging, Data Centres, Energy harvesting and Power Conversion.
SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Their lower ON resistance and a compact chip size result in reduced capacitance and gate charge, in addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than traditional silicon (Si) devices, in which the ON resistance can more than double with increased temperature.
ROHM have recently expanded the SCT Series of 3rd-generation trench-gate type SiC MOSFETs with the addition of a 7-pin surface mount TO-263-7L package option, these devices are available in 8 variants and are available in 650V and 1200V with drain current ratings from 17A to 70A and ON-resistances as low as 30mOhm depending on the device selected. The devices are ideal for large server power supplies, UPS systems, solar power converters, and electric vehicle charging stations requiring high efficiency.
TO-263-7L 7-pin Package with Separate Driver Source Pins
The additional pins of the surface mount TO-263-7L package help maximize switching performance and reduce switching losses over conventional 3-pin package types, contributing to lower power consumption in a variety of applications. With conventional 3-pin packages, the effective gate voltage at the chip reduces due to the voltage dropped across the parasitic inductance of the source terminal. This causes the switching speed to reduce. Adopting the 7-pin surface mount TO-263-7L package separates the driver and power source pins, minimizing the effects of the parasitic inductance component. This makes it possible to maximize the switching speed of SiC MOSFETs, reducing total switching loss (turn ON and turn OFF) over conventional package.
Traditional 3 Lead MOSFET vs New Package with Separate Driver Source Pin
The SCT3 Series is rated for operation at a maximum Junction Temperature (Tj) of 175°C and are supplied in tube packaging.
Key Features
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As one of the global leaders in Silicon Carbide process technology, ROHM are continually expanding their range of SiC MOSFETs. These devices are driving the move towards greater energy efficiency and power handling demanded by applications
In recent years Silicon Carbide (SiC) has emerged as one of the most viable candidates in the search for a next-generation, low-loss power semiconductor element due to its low ON resistance and superior high temperature, high frequency.
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