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UF3C120080K4S

UNITED SILICON CARBIDE INC.

TO247-4 1K2V 80MOHM SIC FFET

Image is for illustrative purposes only. Please refer to product data sheet.

Availability

Stock	20
Reserved Stock	0
Stock Due Date Date next shipment is due, this may not be for the full quantity shown below	-
Total Stock Due	0
Total Reserved Stock Due	0
Supplier Lead Time (wk) (See Lead Time Forecast)	99
Standard Pack Qty non-stocked items may be subject to a higher supplier minimum order quantity	30
Minimum Order Qty non-stocked items may be subject to a higher supplier minimum order quantity	1
Order Multiple	1
Date Code	1917+

Package Type: Tube

RoHS:

Part Not Suitable For New Design

Tariff Code: 8541290000

ECCN: NLR

CoO: China

Specification

›

Brand	UNITED SILICON CARBIDE INC.
Case or Package Type	TO247-4
Continuous Drain Current	33 A
Drain-Source Voltage	1200 V
Gate-Source V(th)	6 V
Input Capacitance	1500 pF
Mounting Type	Through Hole
Power Dissipation	254.2 W
Rds (on)	100 mohm
Type	N-Channel SiCFET

The specification data is supplied for search purposes only. Please refer to the product data sheet for full technical details

PCN PTN

›

PCN (Product Change Notification)
PCN Number: USC-PCN Relocation 2122 Description: Moving Facilities Date of Issue: 04/06/2021 00:00:00
PCN Number: USC-PCN21-221121 Description: Assembly Site Transfer-PSI Technologies Date of Issue: 22/11/2021 00:00:00