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UF3SC065030D8S

UNITED SILICON CARBIDE INC.

DFN8X8 650V 30MOHM SIC FFET

Image is for illustrative purposes only. Please refer to product data sheet.

Availability

Stock	100
Reserved Stock	0
Stock Due Date Date next shipment is due, this may not be for the full quantity shown below	-
Total Stock Due	0
Total Reserved Stock Due	0
Supplier Lead Time (wk) (See Lead Time Forecast)	99
Standard Pack Qty non-stocked items may be subject to a higher supplier minimum order quantity	2500
Minimum Order Qty non-stocked items may be subject to a higher supplier minimum order quantity	1
Order Multiple	1
Date Code (YYWW)	1942+

Package Type: Tape & Reel

RoHS:

Moisture Sensitive

Part Not Suitable For New Design

Tariff Code: 8541290000

ECCN: NLR

CoO: Taiwan (Province of China)

Specification

›

Brand	UNITED SILICON CARBIDE INC.
Case or Package Type	DFN4
Continuous Drain Current	18 A
Drain-Source Voltage	650 V
Gate-Source V(th)	6 V
Input Capacitance	1500 pF
Mounting Type	Surface Mount
Power Dissipation	179 W
Rds (on)	42 mohm
Type	N-Channel SiCFET

The specification data is supplied for search purposes only. Please refer to the product data sheet for full technical details

PCN PTN

›

PCN (Product Change Notification)
PCN Number: USC-PCN-26 Relocation-Specs 2124 Description: Assembly Line, Lead Frame, Mold Compound Date of Issue: 11/06/2021 00:00:00
PTN (Product Termination Notification)
PTN Number: USC-PCN30-080921 Description: End-of-Life Noti fi cati on of UnitedSiC DFN8 Packaged Parts Date of Issue: 04/10/2021 00:00:00