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UJ3C065030B3

UNITED SILICON CARBIDE INC.

D2PAK-3 650V 30MOHM SIC FET

Image is for illustrative purposes only. Please refer to product data sheet.

Availability

Stock	0
Reserved Stock	0
Stock Due Date Date next shipment is due, this may not be for the full quantity shown below	-
Total Stock Due	0
Total Reserved Stock Due	0
Supplier Lead Time (wk) (See Lead Time Forecast)	99
Standard Pack Qty non-stocked items may be subject to a higher supplier minimum order quantity	800
Minimum Order Qty non-stocked items may be subject to a higher supplier minimum order quantity	1
Order Multiple	1

Package Type: Tape & Reel

RoHS:

Part Not Suitable For New Design

Tariff Code: 8541290000

ECCN: NLR

CoO: China

Specification

›

Brand	UNITED SILICON CARBIDE INC.
Case or Package Type	D2PAK/TO263
Continuous Drain Current	65 A
Drain-Source Voltage	650 V
Gate-Source V(th)	6 V
Input Capacitance	1500 pF
Mounting Type	Surface Mount
Power Dissipation	242 W
Rds (on)	35 mohm
Type	N-Channel SiCFET