Toshiba Electronics Europe has expanded its range of photorelays with the addition of four ultra-small devices. TLP3475 and TLP3440 have been designed to deal with high frequency signals, while TLP3417 and TLP3420 are designed to deal with the high voltages required for signals of measured devices such as semiconductor testers.

The devices have been designed for applications where the mounting areas on boards need to be drastically reduced and high speed / high voltage signals need to be measured, for instance in applications such as semiconductor testers, measurement equipment, medical devices and probe cards. They consist of a photo MOSFET optically coupled with an infrared light emitting diode squeezed into an ultra-small VSON4 package.

Photorelays provide design engineers with fast switching speed, high reliability, lower power consumption, and noise-free operation, making them an alternative to mechanical relays. As the cabinets of various types of semiconductor testers and measurement equipment are becoming smaller, the need for ultra-small photorelays has increased. The VSON4 package enables high-density assembly and by replacing USOP4 packages, can shrink the assembly area by 50% and the assembly volume by 60%.

TLP3475 has ON-state resistance of 1Ω (typ.) and output capacitance of 12pF to improve pass characteristics at the time of relay contact-on and avoid problems during high frequency signal transmission. The chip-on-chip device also features OFF-state terminal voltage of 50V (max.) and ON-state current of 0.3A (max.)

TLP3440 features improved leakage characteristics for high frequency signals in the off state with OFF-state output terminal voltage of 40V (max.), ON-state current of 0.12A (max.), ON-state resistance of 12Ω (typ.) and output capacitance of 0.45pF.

Electrical characteristics of the new devices are equivalent to those of existing TLP3375 / 3340 photorelays in USOP4 packages, while the mounting area has been reduced by about 50 %.

TLP3417 and TLP3420 have high voltage withstand 80V to 100V (respectively) to enable the high voltage measurements needed for testing SoC devices. They also boast ON-state current of 0.12A (max.) and 0.1A (max.), ON-state resistance of 7Ω (typ.) and 8Ω (typ.) and output capacitance of 5pF (typ.) and 6pF (typ.) respectively.

All devices achieve 3mA (max) trigger LED currents and 300Vrms (min) isolation voltages.

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