Toshiba has introduced a new series of high-speed switching type super junction MOSFETs. The new DTMOS IV-H series consists of the TK31N60X, TK39N60X and TK62N60X, and is based on Toshiba's fourth generation 600V super junction MOSFET DTMOS IV series.

Using Toshiba's single epitaxial process, the new DTMOS IV-H series of super junction MOSFETs is suited to applications that require high reliability, power efficiency and a compact design, such as high efficiency switching power supplies for servers and telecom base stations; and as power conditioners for photovoltaic inverters. The new series achieves a high speed switching performance while keeping the low ON-resistance level of conventional DTMOS IV - all without loss of power. This is accomplished through the reduction of parasitic capacitance between Gate and Drain, which also contributes to improved power efficiency and downsizing of products.

According to Taka Ichikawa, business development manager for TAEC, "Superjunction DTMOS IV technology delivers many benefits to designers, helping them make resulting applications more efficient in terms of power and footprint."

Key features include:

• Gate pattern optimization, resulting in a 45 percent reduction in Gate-Drain charge when compared with conventional DTMOS IV
• A small increase in low ON-resistance at high temperatures due to the use of the single epitaxial process
• Low ON-resistance lineup

Main Specifications

Additional package options, including 8x8mm DFN, TO-220 and TO-220SIS, are being added and will be available soon.